DataSheet RJH60F5; RJH60F5DPQ
600V, 40A - IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tr =...